Book Name: Electrical Overstress Devices Circuits and Systems
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Electrical Overstress Devices Circuits and Systems pdf freeElectrical Overstress (EOS) continues to impact semiconductor manufacturing, semiconductor components, and systems as technologies scale from micro- to nano-electronics. This book teaches the fundamentals of electrical overstress and how to minimize and mitigate EOS failures. The text provides a clear picture of EOS phenomena, EOS origins, EOS sources, EOS physics, EOS failure mechanisms, and EOS on-chip and system design. It provides an illuminating insight into the sources of EOS in manufacturing, integration of on-chip, and system-level EOS protection networks, followed by examples in specific technologies, circuits, and chips. The book is unique in covering the EOS manufacturing issues from on-chip design and electronic design automation to factory-level EOS program management in today’s modern world.

Guide Particulars :
Language English
Pages 370
Format PDF
Dimension 10.9 MB

Electrical Overstress Devices, Circuits, and Systems by Steven H. Voldman | PDF Free Download.

Author of Electrical Overstress Devices, Circuits, and Systems

Steven H. Voldman is the primary IEEE Fellow within the discipline of electrostatic discharge (ESD) for “Contributions in ESD safety in CMOS, Silicon On Insulator and Silicon-Germanium Expertise.”

He obtained his B.S. in Engineering Science from College of Buffalo (1979), a primary M.S. EE (1981) from Massachusetts Institute of Expertise (MIT), a second diploma EE Diploma (Engineer Diploma) from MIT, an MS Engineering Physics (1986), and a Ph.D. in electrical engineering (EE; 1991) from College of Vermont below IBM’s Resident Examine Fellow program.

He was a member of the IBM improvement for 25 years, engaged on semiconductor gadget physics, gadget design, and reliability e.g., mushy error charge (SER), scorching electrons, leakage mechanisms, latchup, electrostatic discharge (ESD), and electrical overstress (EOS).

Voldman has been concerned in latchup expertise improvement for 30 years. He labored on each the expertise and product improvement in Bipolar SRAM, CMOS DRAM, CMOS logic, Silicon on Insulator (SOI), BiCMOS, Silicon Germanium (SiGe), RF CMOS, RF SOI, good energy, and picture processing applied sciences.

In 2007, Voldman was a member of the Qimonda DRAM improvement staff, engaged on 70, 58, and 48 nm CMOS expertise.

In 2008, he initiated a restricted legal responsibility company (LLC), and he labored at headquarters in Hsinchu, Taiwan, for Taiwan Semiconductor Manufacturing Company (TSMC) as a part of the 45 nm ESD and latchup improvement staff.

He was a Senior Principal Engineer working for the Intersil Company on ESD and latchup improvement from 2009 to 2011. Since 2011, he’s presently unbiased below Dr. Steven H. Voldman LLC, offering consulting, instructing, and patent litigation knowledgeable witness assist.

He’s presently a marketing consultant for Samsung Electronics in Dongtan, South Korea, engaged on sub-20 nm expertise.

Steve Voldman was chairman of the SEMATECH ESD Working Group from 1995 to 2000. In his SEMATECH Working Group, the trouble centered on ESD expertise benchmarking, the primary transmission line pulse (TLP) commonplace improvement staff, strategic planning, and the JEDEC-ESD Affiliation requirements harmonization of the human physique mannequin (HBM) Commonplace.

From 2000 to 2012, as Chairman of the ESD Affiliation Work Group on TLP and very-fast TLP (VF-TLP), his staff was liable for initiating the primary commonplace observe and requirements for TLP and VF-TLP. He has been a member of the ESD Affiliation Board of Administrators and Training Committee.

Electrical Overstress Contents

  • Fundamentals of Electrical Overstress
  • Fundamentals of EOS Fashions
  • EOS, ESD, EMI, EMC, and Latchup 
  • EOS Failure Evaluation 
  • EOS Testing and Simulation 
  • EOS Robustness – Semiconductor Applied sciences 
  • EOS Design – Chip Stage Design and Flooring Planning 
  • EOS Design Chip Stage Circuit Design
  • EOS Prevention and Management 
  • EOS Design – Digital Design Automation 
  • EOS Program Administration 
  • Electrical Overstress in Future Applied sciences

Preface to Electrical Overstress Devices, Circuits, and Systems

This textual content, Electrical Overstress (EOS): Devices, Circuits, and Systems had been initiated based mostly on the necessity to produce a textual content that addresses the basics {of electrical} overstress (EOS) from the manufacturing atmosphere, gadgets, elements, and techniques.

An understanding of the supply of EOS, how one can establish EOS, and present EOS strong merchandise are wanted in as we speak’s digital trade.

Because the manufacturing world evolves, semiconductor networks scale and techniques are altering, the wants and necessities for reliability and EOS strong merchandise are altering.

A textual content is required that connects fundamental EOS phenomena to as we speak’s real-world atmosphere. Whereas vital texts can be found as we speak to show consultants on electrostatic discharge (ESD) on-chip design, there’s a want for a basic understanding of EOS.

That is crucial for knowledgeable, non-expert, non-technical, and layman to grasp the issues dealing with the world as we speak.

As we speak, real-world EOS points encompass us; this happens in a producing atmosphere, energy sources, equipment, actuators, solenoids, soldering irons, cables, to lightning.

When there’s switching, poor grounding, floor loops, noise, and transient phenomena, there will probably be a possible for EOS of gadgets, elements, and printed circuit boards.

Therefore, there’s a want for consultants and non-experts to grasp what the problems that revolve round us are, and what we do to keep away from them. One of many key issues with this subject is the notion that EOS is troublesome to quantify and outline.

This notion was additionally true within the early days of ESD improvement. In consequence, there have been no textbooks on EOS at this date, and but it’s understood {that a} vital share of system and product discipline returns is EOS associated.

A second key downside is a perception that it’s troublesome to differentiate ESD failures from EOS. The rationale that this distinction is necessary is to outline the foundation reason behind the gadget, element, or system failures. In consequence, on this textual content, this will probably be re-emphasized.

A 3rd key downside is that the strategies and strategies to supply each EOS and ESD strong merchandise in the identical lecture, tutorial, supply, or textbook is rarely synthesized in a single dialogue.

That is additionally true that the dialogue and coaching on electromagnetic compatibility (EMC) and ESD are usually taught individually. This textual content has a number of objectives.

The primary objective of the textual content is to show the fundamentals and ideas of EOS and relate them to real-world processes in semiconductor manufacturing, dealing with, and meeting The second objective of the textual content is to supply a powerful technical base for quantification of EOS, highlighting each mathematical and bodily evaluation.

On this vogue, it’s vital to grasp the position and relationship of thermal physics. The third objective of the textual content is to attract a distinction between EOS and ESD. This will probably be achieved by specializing in the heart beat waveform and time scales.

The textual content will always reinforce this distinction by the sources, to the mathematical fashions.

The fourth objective is to debate the inter-relationship to different disciplines, reminiscent of electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup. The fifth objective is to reveal the reader to EOS testing and requirements of each semiconductor chips and techniques.

On this part, we’ll once more distinguish between the EOS and ESD checks and requirements. The fifth objective is to reveal how one can defend semiconductor chips and techniques from EOS.

The sixth objective is to reveal how one can defend semiconductor chips and techniques from each EOS and ESD occasions. The seventh objective is to show EOS points in several expertise sorts for digital, analog, and energy electronics.

The eighth objective is to spotlight electrical design automation (EDA) strategies to supply EOS strong merchandise. On this part, we’ll once more draw distinctions of EDA options for EOS, ESD, and latchup.

The ninth objective is to debate an EOS program administration for manufacturing environments from measurements to audits, to make sure an EOS Protected Space.

The tenth objective is to supply a glimpse into the current and future with new nano-structures and nano-systems that lie forward. This may present perception into what will probably be wanted sooner or later, in addition to the magnitude of the EOS concern within the coming years.

This textual content, Electrical Overstress (EOS): Devices, Circuits, and Systems include the next: Chapter 1 introduces the reader to an outline of the language and fundamentals related to EOS.

In Chapter 1, the inspiration for a dialogue of EOS is established. Chapter 1 opens the dialog of defining EOS and its relationship to different phenomena, reminiscent of electrostatic discharge (ESD), electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup. EOS is outlined as properly by way of electrical over-current, electrical over-power, and different ideas.

In our dialogue, there’s an emphasis on distinguishing EOS from ESD. In consequence, I’ll draw distinctions by the textual content on the distinction of failure evaluation, time constants, and different technique of identification and classification.

A plan to outline a secure working space (SOA) and its position in EOS can also be emphasised. In Chapter 2, the bodily and mathematical foundation for understanding EOS is supplied.

In Chapter 2, the objective is to reveal the arithmetic and bodily fashions related to power-to-failure, time constants, and supplies. This chapter will present the instruments crucial to grasp the equations and bodily limits of the electrothermal fashions derived prior to now.

A key distinction on this chapter, the ESD time regime from the EOS time regime will probably be recognized to attract consideration to the totally different power-to-failure options for these processes.

The first cause for this in-depth dialogue is to reveal that EOS phenomena might be quantified and understood – which confronts the skeptics that this isn’t a science that’s quantifiable.

Within the subsequent chapter, we’ll permit you to get better from the rigor of this chapter, present a sensible connection to the actual world, and catch your breath.

In Chapter 3, the textual content’s focus returns to a sensible dialogue on the sources and failure mechanisms related to EOS.

The sources will embrace equipment, solenoids, actuators, cables and lightning. EOS failure mechanisms from gadget element failures, bond pads, bond wires, and packaging are recognized.

On this chapter, some concentrate on EOS particular failures from ESD is once more be highlighted. Chapter 4 focuses on EOS failure mechanisms and failure evaluation. The chapter highlights the failure evaluation course of, failure evaluation strategies, and instruments.

Failure mechanism examples are proven from the totally different failure evaluation software outcomes of each EOS and ESD failures. In Chapter 5, EOS and ESD testing strategies and testing requirements are mentioned.

EOS testing strategies mentioned embrace system-level checks, reminiscent of IEC 61000-4-2, and transient surge requirements related to EOS (IEC 61000-4-5).

The chapter additionally discusses the ESD checks and requirements, such because the human physique mannequin (HBM), machine mannequin (MM), charged gadget mannequin (CDM), transmission line pulse (TLP), very-fast transmission line pulse (VF-TLP), in addition to system-like testing.

System-like testing begins to transition towards EOS phenomena, (e.g., cable discharge occasion; CDE) and therefore will probably be a part of our dialogue on testing.

Chapter 6 discusses EOS in several semiconductor applied sciences from CMOS, bipolar, LDMOS, to bipolar-CMOS-DMOS (BCD) applied sciences and the problems that come up within the totally different utility areas.

A spotlight will probably be on how the applied sciences can tackle energy and EOS robustness points. The main target in Chapter 7 is EOS design. A key query that arises is, ‘how does EOS design differ from ESD design?’.

A second key query is, ‘how do you design for each ESD and EOS in a given chip or system design?’. This chapter consists of product definition, specs, expertise identification, to each top-down and bottom-up design methodologies and flooring planning.

It additionally exhibits the utilization of circuit design to deal with over-current and over-temperature controls. In Chapter 8, EOS safety gadgets are mentioned.

These embrace a plethora of parts from snapback gadgets to voltage triggered gadgets. EOS safety is achieved utilizing transient voltage suppression (TVS), thyristor surge safety gadgets (TSPD), metallic oxide varistors (MOV), conductive polymers, gasoline discharge tubes (GDT), fuses, circuit breakers, and different parts.

These EOS safety parts are very distinct from these employed for ESD safety. In Chapter 9, system-level issues and options are mentioned. The main target is on EOS management within the manufacturing and manufacturing atmosphere.

The chapter addresses preventive actions, controlling the again finish course of, to product space operations. In Chapter 10, digital design automation (EDA) strategies and strategies for EOS are mentioned.

Design rule checking (DRC), format versus schematic (LVS), to electrical rule checking (ERC) strategies are used for each ESD and EOS checking and verification. On this chapter, strategies being utilized as we speak for EOS environments are proven.

In Chapter 11, an EOS program administration course of is mentioned. The chapter will reveal subjects on design critiques, checklists, corrective actions, audits, and the design launch course of to ensure EOS strong merchandise.

In Chapter 12, EOS in future constructions and nano-devices is mentioned. The chapter discusses EOS points in magnetic recording, FinFETs, graphene, carbon nanotubes, to phase-change reminiscence. This concluding chapter takes a take a look at micro-motors, micro-mirrors, RF MEM switches, and many novel gadgets.

EOS in silicon interposers and by silicon through (TSV) in 2.5-D and 3-D techniques can also be highlighted. This introductory textual content will hopefully open your curiosity within the discipline {of electrical} overstress (EOS), electrostatic discharge (ESD), electromagnetic interference (EMI), and electromagnetic compatibility (EMC) and educate the way it pertains to as we speak’s world.

To ascertain a stronger data of ESD safety, it’s advisable to learn the opposite texts ESD Fundamentals: From Semiconductor Manufacturing to Product Use, ESD: Physics and Devices, ESD: Circuits and Expertise

ESD: RF Circuits and Expertise, ESD: Failure Mechanisms and Fashions, ESD: Design and Synthesis, and Latchup. Benefit from the textual content, and benefit from the topic of EOS – simply don’t get stressed over electrical overstress (EOS).


Electrical Overstress (EOS): Devices, Circuits and Systems PDF

Author(s): Steven H. Voldman

Series: EOS

Publisher: Wiley, Year: 2013

ISBN: 1118511883,9781118511886

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